Samsung has boosted its solid state memory R&D capabilities with the acquisition of Grandis
Samsung has flexed its growing muscle in the memory sector with an acquisition to beef up its research and development arm in the solid-state memory sector.
Samsung Electronics did this with the acquisition of Grandis, a 9-year-old firm that makes spin transfer torque random-access memory (STT-RAM).
Terms of the deal were not released.
Grandis will be merged into Samsung’s R&D operations focused on developing the next generation of random-access memory, in which new semiconductor materials and structures are reviewed for their long-term commercial value, Samsung said.
Grandis’ proprietary Spin-Transfer Torque RAM has all the characteristics of what the company calls “an ideal universal memory” for IT devices which could eventually replace first-generation, field-switched magnetic random access memory (MRAM).
Also known as STT-MRAM or SpinRAM, STT-RAM synthesises non-volatile, low-power consumption, ultra-fast read and write speed, unlimited endurance, and extendability beyond the now-standard 32nm semiconductor node.
Samsung claims that it offers system designers the ability to develop new products with high performance and that use less power.
Grandis was established in 2002 and is headquartered in Milpitas, California.