Press release

Samsung Successfully Completes 5nm EUV Development to Allow Greater Area Scaling and Ultra-Low Power Benefits

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Samsung Electronics Co., Ltd., a world leader in advanced semiconductor
technology, today announced that its 5-nanometer (nm) FinFET process
technology is complete in its development and is now ready for
customers’ samples. By adding another cutting-edge node to its extreme
ultraviolet (EUV)-based process offerings, Samsung is proving once again
its leadership in the advanced foundry market.

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Samsung's new EUV manufacturing line in Hwaseong, Korea. (Graphic: Business Wire)

Samsung’s new EUV manufacturing line in Hwaseong, Korea. (Graphic: Business Wire)

Compared to 7nm, Samsung’s 5nm FinFET process technology provides up to
a 25 percent increase in logic area efficiency with 20 percent lower
power consumption or 10 percent higher performance as a result of
process improvement to enable us to have more innovative standard cell

In addition to power performance area (PPA) improvements from 7nm to
5nm, customers can fully leverage Samsung’s highly sophisticated EUV
technology. Like its predecessor, 5nm uses EUV lithography in metal
layer patterning and reduces mask layers while providing better fidelity.

Another key benefit of 5nm is that we can reuse all the 7nm intellectual
property (IP) to 5nm. Thereby 7nm customers’ transitioning to 5nm will
greatly benefit from reduced migration costs, pre-verified design
ecosystem, and consequently shorten their 5nm product development.

As a result of the close collaboration between Samsung Foundry and its
‘Samsung Advanced Foundry Ecosystem (SAFE™)’ partners, a robust design
infrastructure for Samsung’s 5nm, including the process design kit
(PDK), design methodologies (DM), electronic design automation (EDA)
tools, and IP, has been provided since the fourth quarter of 2018.
Besides, Samsung Foundry has already started offering 5nm Multi Project
Wafer (MPW) service to customers.

“In successful completion of our 5nm development, we’ve proven our
capabilities in EUV-based nodes,” said Charlie Bae, Executive Vice
President of Foundry Business at Samsung Electronics. “In response to
customers’ surging demand for advanced process technologies to
differentiate their next-generation products, we continue our commitment
to accelerating the volume production of EUV-based technologies.”

In October 2018, Samsung announced the readiness and its initial
production of 7nm process, its first process node with EUV lithography
technology. The company has provided commercial samples of the
industry’s first EUV-based new products and has started mass production
of 7nm process early this year.

Also, Samsung is collaborating with customers on 6nm, a customized
EUV-based process node, and has already received the product tape-out of
its first 6nm chip.

Mr. Bae continued, “Considering the various benefits including PPA and
IP, Samsung’s EUV-based advanced nodes are expected to be in high demand
for new and innovative applications such as 5G, artificial intelligence
(AI), high performance computing (HPC), and automotive. Leveraging our
robust technology competitiveness including our leadership in EUV
lithography, Samsung will continue to deliver the most advanced
technologies and solutions to customers.”

Samsung foundry’s EUV-based process technologies are currently being
manufactured at the S3-line in Hwaseong, Korea. Additionally, Samsung
will expand its EUV capacity to a new EUV line in Hwaseong, which is
expected to be completed within the second half of 2019 and start
production ramp-up for next year.

About Samsung Electronics Co., Ltd.

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