Press release

ON Semiconductor to Launch SiC-based Hybrid IGBT and Isolated High Current IGBT Gate Driver at PCIM Europe 2019

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ON Semiconductor (Nasdaq: ON), driving energy efficient innovations,
will be launching and exhibiting a new silicon-carbide
(SiC) based hybrid IGBT
and associated isolated
high current IGBT gate driver
at the PCIM Europe 2019 Exhibition and
Conference in Nuremberg beginning May 7th.

uses the latest field stop IGBT and SiC Schottky diode technology to
offer low conduction and switching losses in multiple power
applications, including those that will benefit from reduced reverse
recovery losses, such as totem pole based bridgeless power factor
correction (PFC) and inverters.

The device co-packages a silicon-based IGBT with a SiC Schottky barrier
diode, resulting in an excellent tradeoff between the lower performance
of silicon-based solutions and the higher cost of entirely SiC-based
solutions. The high-performance device is rated for 650 V operation and
able to handle continuous currents up to 100 A @ 25°C (50 A @ 100°C) as
well as pulsed currents up to 200 A. For systems requiring greater
current capability, a positive temperature co-efficient allows for easy
and convenient parallel operation.

Modern electric vehicle applications not only use energy to travel but,
in some cases store energy which may be used to power the home at peak
times. This requires a bi-directional charger that must have high
efficiency switching to ensure that energy is not wasted during the
transfer. In this use case, the IGBT with external SiC diode is
significantly more efficient than a MOSFET solution as there are no
associated forward or reverse recovery losses.

can operate with junction temperatures as high as 175°C making it
suitable for the most demanding power applications, including
automotive. It is fully AEC-Q101 qualified, further demonstrating its
suitability for use in onboard EV and HEV chargers.

Alongside the new hybrid IGBT, ON Semiconductor will also be releasing
and showing a new range of isolated high current IGBT drivers at PCIM.
The NCD(V)57000
series is aimed at multiple power applications including solar
inverters, motor drives, uninterruptible power systems (UPS) and
automotive applications such as powertrain and PTC heaters.

The NCD(V)57000 series are high-current single channel IGBT drivers with
internal galvanic safety isolation designed to provide highly efficient
operation in power applications that stipulate high reliability. The
devices feature complementary inputs, open drain fault and ready
outputs, an active Miller clamp, accurate undervoltage lockout (UVLO),
DESAT protection with soft turn off, negative gate voltage pin and
separate high and low driver outputs for system design flexibility.

The galvanic isolation is rated at greater than 5 kVrms which meets the
requirements of UL1577; the working voltage is greater than 1200 V; and
the devices guarantee 8 mm creepage distance (input > output) to meet
reinforced safety isolation requirements. NCD(V)57000
devices can source 7.8 A drive current and sink 7.1 A which is more than
three times the capability of some competing devices. More importantly,
they also have a greater current capability while operating in the
Miller plateau which, when combined with their advanced protection
features, makes them best-in-class IGBT drivers.

About ON Semiconductor

ON Semiconductor (Nasdaq: ON)
is driving energy efficient innovations, empowering customers to reduce
global energy use. The company is a leading supplier of
semiconductor-based solutions, offering a comprehensive portfolio of
energy efficient, power management, analog, sensors, logic, timing,
connectivity, discrete, SoC and custom devices. The company’s products
help engineers solve their unique design challenges in automotive,
communications, computing, consumer, industrial, medical, aerospace and
defense applications
. ON Semiconductor operates a responsive,
reliable, world-class supply chain and quality program, a robust
compliance and ethics program, and a network of manufacturing
facilities, sales offices and design centers in key markets throughout
North America, Europe and the Asia Pacific regions. For more
information, visit

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