Press release

EPC to Showcase eGaN® Technology-Based High Power Density DC-DC Conversion for Cars and Computers, as well as Many Other Applications at PCIM Europe 2019

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Sponsored by Businesswire

The EPC
team will be delivering seven technical presentations on gallium nitride
(GaN) technology and applications at PCIM Europe 2019 in Nuremberg,
Germany from May 7th through the 9th. In addition, in Hall 7,
Stand 335, the company will exhibit its latest eGaN FETs and ICs in
customers’ end products that are rapidly adopting eGaN technology.

EPC will be demonstrating eGaN devices in several applications
including: high performance 48 V DC-DC power conversion for advanced
computing and automotive
applications, high power nanosecond pulsed laser drivers for lidar
used in autonomous vehicles, multiple device, large area wireless
power
for consumer and industrial applications, and precision motor
drives for robotics and drones.

PCIM Europe (Power Conversion and Intelligent Motion) is the leading
international exhibition for power electronics, intelligent motion,
renewable energy and energy management. International exhibitors inform
visitors about the newest products, trends and developments in the power
electronics industry. PCIM Europe is the forum for technologies for the
whole value chain of the power electronics industry, from the components
to the intelligent system.

Technical
Presentations
Featuring GaN FETs and Integrated Circuits by
EPC Experts:

  • Seminar: Evolution of GaN FETs from discrete device through power
    stages

    Presenter: Michael de Rooij, Ph.D.
    Schedule: Monday,
    May 6th, 9:00 am – 5:00 pm (Arvena Park Hotel Nuremberg)
  • GaN Based High-Density Unregulated 48 V to x V LLC Converters with
    ≥ 98% Efficiency for Future Data Center

    Speaker: Mohamed Ahmed
    Schedule: Tuesday,
    May 7th, 11:25 am (Paper – E02-5004, Room – München 1)
  • PSD Panel Session: The Evolution of GaN
    Speaker: Alex
    Lidow, Ph.D.
    Schedule: Tuesday, May 7th, 12:00 pm – 1:00
    pm (Hall 7, Stand 543)
  • Bodo’s Podium: GaN – Devices are Mature
    Speaker: Alex
    Lidow, Ph.D. 
    Schedule: Wednesday, May 8th, 1:00 pm
    – 4:00 pm (Hall 7, Stand 543)
  • Efficiency Optimization in Highly Resonant Wireless Power Systems
    Presenter:
    Michael de Rooij, Ph.D.
    Schedule: Wednesday, May 8th,
    1:30 pm (Paper – A04-4936, Room – München 1)
  • Poster Session: GaN Based High Current Bidirectional DC-DC
    Converter for 48 V Automotive Applications

    Presenter: John
    Glaser, Ph.D. 
    Schedule: Wednesday, May 8th, 3:15 pm
    – 5:15 pm (Foyer by NCC Mitte Entrance)
  • Poster Session: Optimal GaN FET Scaling for Minimal Power Loss in
    High Step-down Ratio Half Bridge Converters

    Speaker: Jianjing
    Wang, Ph.D. 
    Schedule: Wednesday, May 8th, 3:15 pm –
    5:15 pm (Foyer by NCC Mitte Entrance)

About EPC

EPC is the leader in enhancement mode gallium nitride based power
management devices. EPC was the first to introduce enhancement-mode
gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in
applications such as DC-DC
converters
, wireless
power transfer
, envelope
tracking
, RF transmission, power
inverters
, remote
sensing technology (LiDAR),
and Class-D
audio amplifiers
with device performance many times greater than the
best silicon power MOSFETs. EPC also has a growing portfolio of
eGaN-based integrated circuits that provide even greater space, energy,
and cost efficiency.

Visit our web site: www.epc-co.com

eGaN is a registered trademark of Efficient Power Conversion
Corporation, Inc.