announces the availability of their industry-leading enhancement-mode
gallium nitride (GaN) devices in wafer form for ease of integration.
FETs and ICs are traditionally sold as singulated chip-scale devices
with solder bars or solder bumps.
packaging is a more efficient form of packaging that reduces the
resistance, inductance, size, thermal impedance, and cost of power
transistors. These attributes of eGaN devices enable unmatched
in-circuit performance at competitive prices.
Wafer-level offerings of these devices allows for easier integration in
customer power system sub-assemblies, further reducing device
interconnect inductances and the interstitial space needed on the
printed circuit board (PCB). This increases both efficiency and power
density while reducing assembly costs.
“We have listened to our partners and are pleased to offer our
industry-leading GaN products in wafer form that can accommodate a
variety of assembly techniques and applications,” commented Alex Lidow,
CEO and co-founder of EPC.
EPC is offering eGaN power devices in wafer form either with or without
solder bumps. Extra services such as wafer thinning, metallization of
the wafer backside, and application of backside coating tape are also
available. More information can be found at: epc-co.com/epc/Products/WaferSales.aspx
EPC is the leader in enhancement mode gallium nitride-based power
management devices. EPC was the first to introduce enhancement-mode
gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in
applications such as DC-DC
power transfer, envelope
tracking, RF transmission, power
sensing technology (Lidar), and Class-D
audio amplifiers with device performance many times greater than the
best silicon power MOSFETs. EPC also has a growing portfolio of
eGaN-based integrated circuits that provide even greater space, energy,
and cost efficiency.
Visit our web site: www.epc-co.com
eGaN is a registered trademark of Efficient Power Conversion