EPC
announces successful AEC Q101 qualification of the 80 V EPC2214
designed for lidar systems in the automotive industry and other harsh
environments.
eGaN technology has been in mass production for over nine years,
accumulating billions of hours of successful field experience in automotive
applications, such as lidar
(Light Detection and Ranging) and radar for autonomous cars, 48 V – 12 V
DC-DC converters used in data center computers, ultra-high fidelity
infotainment systems, and high-intensity headlamps for trucks. This new
device has completed rigorous automotive AEC Q101 qualification testing
and will be followed with several more discrete transistors and
integrated circuits designed for the harsh automotive environment.
The EPC2214,
an 80 V, 20 mΩ, eGaN FET with a 47 A pulsed current rating in a tiny 1.8
mm2 footprint, is perfectly suited to use for firing the
lasers in lidar
systems because the FET can be triggered to create high current with
extremely short pulse widths. The short pulse width leads to higher
resolution, and the higher pulse current allows the lidar system to
discern objects at greater distances. These two characteristics, along
with their tiny size and low cost, make eGaN FETs ideal for radar and
ultrasonic sensors in addition to lidar in demanding automotive
applications.
To complete AEC Q101 testing, EPC’s eGaN FETs underwent rigorous
environmental and bias-stress testing, including humidity testing with
bias (H3TRB), high temperature reverse bias (HTRB), high temperature
gate bias (HTGB), temperature cycling (TC), as well as several other
tests. Of note is that EPC’s WLCS packaging passed all the same testing
standards created for conventional packaged parts, demonstrating that
the superior performance of chip-scale packaging does not compromise
ruggedness or reliability. These eGaN devices are produced in facilities
certified to the Automotive Quality Management System Standard IATF
16949.
EPC’s CEO and co-founder Alex Lidow notes, “This new automotive product
is the most recent in what will be a constant stream of EPC transistors
and integrated circuits designed to enable autonomous driving and
improve fuel economy and safety. Our eGaN technology is faster, smaller,
more efficient, lower cost, and more reliable than the aging silicon
power MOSFET used in today’s vehicles.”
Price and Availability
The EPC2214
eGaN FET is priced at 2.5Ku/reel at $0.72 each and is available for
immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en.
About EPC
EPC is the leader in enhancement mode gallium nitride based power
management devices. EPC was the first to introduce enhancement-mode
gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in
applications such as DC-DC
converters, wireless
power transfer, envelope
tracking, RF transmission, power
inverters, remote
sensing technology (LiDAR), and Class-D
audio amplifiers with device performance many times greater than the
best silicon power MOSFETs. EPC also has a growing portfolio of
eGaN-based integrated circuits that provide even greater space, energy,
and cost efficiency.
Visit our web site: www.epc-co.com
eGaN is a registered trademark of Efficient Power Conversion
Corporation, Inc.
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